| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Rohm |
Image sensor heads 1) By integrating the signal amplifier on the sensor chip, external noise is shut out. Additionally, newly developed analog memory circuit and realizes high speed scanning. 2) The LED light source is mounted on the same substrate as the sensor chip w |
|
|
|
|
Rohm |
ECR 2.7V Print Voltage 1) The B series brings reduced height of protective resin for IC and enlarged paper pathway for thermal papers. Thanks to ROHM’s latest LSI high integrated mounting technology and it’s ultra slim driver IC. 2) The B series accede the great world clas |
|
|
|
|
Rohm |
2SA2005 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³ ·¬¬»® ïòî ïòí ðòè îòëì øï÷ øî |
|
|
|
|
Rohm |
Medium power transistor 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 !Applications Smal |
|
|
|
|
ROHM |
High-speed Switching Transistor 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103 / 2SC5525. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base |
|
|
|
|
ROHM |
Power Transistor 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base |
|
|
|
|
Rohm |
Image sensor heads 1) By integrating the signal amplifier on the sensor chip, external noise is shut out. Additionally, newly developed analog memory circuit and realizes high speed scanning. 2) The LED light source is mounted on the same substrate as the sensor chip w |
|
|
|
|
Rohm |
2SA2030 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) 250mV At IC= -200mA, IB= -10mA 3) Complementary NPN Types : 2SC5663 (VMT3) / 2SC5585 (EMT3) 4) Lead Free/RoHS Compliant. 2SA2030 (SC-105AA) SMT3 Coll |
|
|
|
|
Rohm |
2SA2072 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically. (Typ. : −200mV at IC = −2.0A, I B = −200mA) 3) Strong discharge po wer for inductive load an d capacitance load. 4) Low Noise. 5) Complements the 2SC5825. z |
|
|
|
|
Rohm |
Low frequency transistor 1)High current. 2)Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER lInner circuit 2SA2030 lOutline SOT-723 SOT-416 2SA2030 2SA2018 (VMT3) (EMT3) SOT-346 |
|
|
|
|
ROHM |
Power Transistor 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base |
|
|
|
|
Rohm |
Monochrome image sensor heads 1) Signal amplifier is built in to the image sensor IC in order to increase immunity to external noise. 2) The LED light source is mounted on the same substrate as the sensor chip which makes it possible to package the device with lighter weight and |
|
|
|
|
Rohm |
Thick film thermal printhead 1) Providing easy design solution of power supply with the same bit number for each strobe at A4 size FAX application by employing the first in the industry 216 bits Driver IC. 2) Achieved Logic voltage of 3.13 to 5.25V and provides the wide range of |
|
|
|
|
Rohm |
LSI Assembly ecifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whats |
|
|
|
|
Rohm |
Power transistor 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !External dimensions |
|
|
|
|
Rohm |
General Purpose Transistor 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SC4617/2SC4081UB/2SC4081U3/2SC2412K lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lOutline SOT-723 2SA2029 (VMT3) SOT-416 2SA1774 (EMT3) SOT-323 SOT-416FL 2SA1774EB (EMT |
|
|
|
|
Rohm |
Switching diode High reliability ●Inner Circuit Data sheet ●Application General switching ●Structure Epitaxial planar ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Av |
|
|
|
|
ROHM |
USB Type-C Power Delivery Controller USB Type-C Specification compatible USB PD Specification compatible (BMC-PHY) Power path control using N-channel MOSFET drivers with back flow prevention Type-C cable orientation detection Supports DFP-SOURCE mode Integrated Secondary sid |
|
|
|
|
Rohm |
Transistors 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³ ·¬¬»® ïòî ïòí ðòè îòëì øï÷ øî |
|
|
|
|
Rohm |
Monochrome image sensor heads 1) Signal amplifier is built into the image sensor IC in order to increase immunity to external noise. 2) The LED light source is mounted on the same substrate as the sensor chip which allows packaging of the device with lighter weight and smaller si |
|
Desde 2024. D4U Semiconductor.
|