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Rohm |
Switching diode 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak |
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Rohm |
Switching diode 1) Ultra small mold type. (UMD2) 2) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure ROHM : UMD2 0.3±0.05 0.7±0.2 0.1 JEDEC : SOT-323 JEITA : SC-90/A dot (year week factory) lTaping specifications (Unit : mm) 4.0 |
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Rohm |
DIODE |
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Rohm |
High Speed Switching Ultra Mini Diode |
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Rohm |
Switching diode 1) Glass sealed envelope. (MSD) 2) VRM=250V guaranteed. 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 !Construction Silicon epitaxial planar ROHM : MSD EIAJ : − JEDEC : DO-34 !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse |
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ROHM |
Switching Diode 1)Ultra small mold type. (EMD2) 2)High reliability Construction Silicon epitaxial planar 0.8±0.05 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) 1.2±0.05 1.6±0.1 0.6 1.7 0.12±0.05 0.6±0.1 |
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Rohm |
Switching diode 1) Ultra small mold type. (VMN2) 2) High reliability 0.9±0.05 1.0±0.05 0～0.1 0.156 0.35±0.1 0.37±0.02 0.60±0.06 zConstruction Silicon epitaxial planer 0.58 0～0.1 0.37 0.28±0.05 VMN2 zStructure 0.025 0.05±0.04 0.28±0.05 ROHM : VMN2 dot (ye |
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Rohm |
Schottky Barrier Diode 1) Small power mold type (KMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type 0～0.03 0.8±0.05 0.6±0.03 ROHM : KMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.7±0.05 lTaping Dimensions (Unit : mm) KMD2 lSt |
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Rohm |
Switching Diode 1)Ultra small mold type. (EMD2) 2)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) 0.6±0.1 EMD2 lStructure lAbsolute maximum ratings (Ta |
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Rohm |
Switching Diode |
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Rohm |
(1SS140 - 1SS141) DIODE |
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Rohm |
(1SS140 - 1SS141) DIODE |
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Rohm |
Schottky Barrier Diode 1)Small power mold type (KMD2) 2)High reliability 3)Low VF 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) www.Da |
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Rohm |
Switching diode 1)Ultra small mold type.（VMD2） 2)High reliability Construction Silicon epitaxial planer 0.27±0.03 0.5±0.05 VMD2 Structure ROHM : VMD2 dot (year week factory) Taping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 0 0.18±0.05 1.75±0.1 |
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Rohm |
Switching Diode 1) Ultra small mold type. (EMD2) 2) High reliability EMD2 lStructure lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 0.6±0.1 dot (year week factory) lTaping specifications (Unit : mm) cathode anode lAbsolut |
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ROHM |
Band Switching Diodes High reliability Small mold type Low rF ●Inner Circuit ●Application High ｆrequency switching ●Structure EPITAXIAL PLANAR ●Absolute Maximum Rating (Ta = 25ºC) Parameter Symbol Forward current IF Reverse voltage VR J |
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Rohm |
Silicon Epitaxial Planar High-Speed Switching Diodes |
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Rohm |
Silicon Epitaxial Planar High-Speed Switching Diodes |
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Rohm |
Band switching diode High reliability Small mold type Low rF ●Inner Circuit Data sheet ●Application High ｆrequency switching ●Structure EPITAXIAL PLANAR ●Absolute Maximum Rating (Ta = 25ºC) Parameter Symbol Forward current IF Reverse vol |
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Rohm |
Switching diode 1) Small surface mounting type. (UMD2) 2) VRM=300V guaranteed. 3) High reliability. 1.7±0.1 !Construction Silicon epitaxial planar 1.25±0.1 Model identification label 2.5±0.2 0.7 +0.2 −0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !External dime |
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Desde 2024. D4U Semiconductor.
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