Renesas Technology TBB Hoja de datos

No.	parte #	Fabricante	Descripción
1	TBB1012	Renesas Technology	Twin Built in Biasing Circuit MOS FET IC • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power sup
2	TBB1010	Renesas Technology	Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High \|yfs\|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD ab
3	TBB1016	Renesas Technology	Twin Built in Biasing Circuit MOSFET • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Very useful for total tuner cost reduction. • Suitable for World Standard Tuner RF amplifier. • High gain; PG = 32 dB at 200 MHz • Low noise; NF = 1.0 dB
4	TBB1017	Renesas Technology	Twin Built in Biasing Circuit MOS FET IC • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power sup