Renesas Technology RJK Hoja de datos

No.	parte #	Fabricante	Descripción
1	RJK6015DPK	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
2	RJK6026DPP	Renesas Technology	Silicon N Channel MOSFET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage www.D
3	RJK1055DPB	Renesas Technology	Silicon N-Channel MOSFET  High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet
4	RJK4014DPK	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
5	RJK6013DPE	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
6	RJK6014DPP	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
7	RJK0332DPB	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1,
8	RJK0354DSP	Renesas Technology	Silicon N Channel Power MOS FET Power Switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 4 G 5 6 7 8 D D D D 8 1
9	RJK0355DPA	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6
10	RJK0366DSP	Renesas Technology	Silicon N Channel Power MOS FET Power Switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12
11	RJK2006DPF	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source vol
12	RJK03F8DNS	Renesas Technology	Silicon N Channel Power MOS FET High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V)  Pb-free  Halogen-free      REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN
13	RJK03B7DPA	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1789-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: P
14	RJK2555DPA	Renesas Technology	Silicon N Channel MOS FET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23
15	RJK4012DPE	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
16	RJK6014DPK	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
17	RJK0305DPB	Renesas Technology	Silicon N Channel Power MOS FET Power Switching • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5
18	RJK0328DPB	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1,
19	RJK0330DPB	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1,
20	RJK0348DPA	Renesas Technology	Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6