Renesas Technology HZS Hoja de datos

No.	parte #	Fabricante	Descripción
1	HZS-L	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3
2	HZSxL	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3
3	HZS6L	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3
4	HZS6L1	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3