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Renesas Technology |
Variable Capacitance Diode • High capacitance ratio. (n = 2.62 min) • Low series resistance. (rs = 0.40 Ω max) • Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL396C Laser Mark 7 Package Code EFP Pin Arrangement Catho |
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Renesas Technology |
Silicon Epitaxial Planar Pin Diode • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max) Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Ordering Information Type N |
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Renesas Technology |
Silicon Epitaxial Trench Pin Diode • • • • • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No |
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Renesas Technology |
Variable Capacitance Diode • Low tolerance. • Low series resistance. (rs = 1.1 Ω max) • Good C-V linearity. • Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL375B Laser Mark H Package Code EFP Pin Arrangement Cathode |
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Renesas Technology |
Variable Capacitance Diode • High capacitance ratio. (n = 2.30 to 2.46) • Low series resistance. (rs = 0.4 Ω max) • Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. REJ03G0230-0200 Rev.2.00 Mar 21, 2006 Ordering Information Type No. HVL399C |
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Renesas Technology |
Variable Capacitance Diode • High capacitance ratio. (n = 1.60 min) • Low series resistance. (rs = 0.70 Ω max) • Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL400C Laser Mark X Package Code EFP Pin Arrangement Catho |
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Renesas Technology |
Silicon Epitaxial Planar Pin Diode • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C1 = 1.0 pF max) • Low forward resistance. (rf = 0.7 Ω max) • Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HV |
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Renesas Technology |
Variable Capacitance Diode • High capacitance ratio. (n = 2.35 min) • Low series resistance. (rs = 0.60 Ω max) • Thin Extremely small Flat Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL355CM Laser Mark B Package Code TEFP Pin Arrangeme |
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Renesas Technology |
Variable Capacitance Diode • • • • Narrow terminal Capacitance deviation. Low series resistance. (rs = 1.1 Ω max) Good C-V linearity. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL375CM Laser Mark H Packag |
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Renesas Technology |
Silicon Epitaxial Planar Pin Diode • • • • Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance.(C = 0.30 pF max) Low forward resistance. (rf = 3.2 Ω max) Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Orderi |
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Renesas Technology |
Silicon Epitaxial Planar Pin Diode • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information |
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Renesas Technology |
Silicon Epitaxial Trench Pin Diode • • • • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information |
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Desde 2024. D4U Semiconductor.
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