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Renesas Technology 2SD DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
2SD974

Renesas Technology
Silicon NPN Epitaxial Transistor
E = 5 V, IC = 1 A*1 IC = 1 A, IB = 0.05 A*1 ICP = 1 A, IB1 =
  –IB2 = 50 mA*1 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collecto
Datasheet
2
D2030

Renesas Technology
2SD2030
pt. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur w
Datasheet



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