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Renesas Technology |
Silicon NPN Epitaxial Type Transistor Low frequency amplifier REJ03G0760-0100 (Previous ADE-208-1479) Rev.1.00 Aug.10.2005 Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 1 3. Collector 2 *CMPAK is a trademark of Renesas Technology Corp. Abso |
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Renesas Technology |
Silicon NPN Epitaxial Type Transistor • High frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5851 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current |
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Renesas Technology |
Silicon NPN epitaxial planar type Transistor • VHF amplifier, local oscillator Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5852 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector |
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Renesas Technology |
Silicon NPN Epitaxial Type Transistor • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz www.DataSheet4U.com Outline MFPAK-4 3 2 2 WU4 1 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: |
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Renesas Technology |
SILICON POWER TRANSISTOR • High speed switching • High voltage PACKAGE DRAWING (Unit: mm) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note VCBO VCEO VE |
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Renesas Technology |
Silicon NPN Transistor • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withs |
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Renesas Technology |
Silicon NPN Transistor • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “WJ –“. 2SC5894 Absolute |
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Renesas Technology |
Silicon NPN Epitaxial Type Transistor product Power gain Noise figure 3rd. Order Intercept Point Symbol ICBO ICEO IEBO hFE Cob fT PG NF IP3 Min 70 17 13 Typ 110 0.3 20 17.5 1.15 10 Max 1 1 10 150 0.6 1.7 Unit µA µA µA pF GHz dB dB dBm Test conditions VCB = 12 V, |
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Desde 2024. D4U Semiconductor.
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