| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Renesas |
ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0. |
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Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla |
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Renesas |
ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0. |
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Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla |
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Renesas |
ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0. |
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Renesas |
ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0. |
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Renesas |
ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil |
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Renesas |
ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil |
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Renesas |
ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil |
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|
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla |
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|
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla |
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|
|
|
Renesas |
ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil |
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Desde 2024. D4U Semiconductor.
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