Renesas RD3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	RD39S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
2	RD33S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
3	RD30S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
4	RD39E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
5	RD33FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
6	RD3.6FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
7	RD30E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
8	RD3.9E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
9	RD3.3E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
10	RD3.6E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
11	RD3ST24	Renesas	Standby Controller • Supply voltage range: 2.3 to 5.5 V • Temperature range: –40 to +85°C • Output current: ±6mA (@VCC=3.0V), ±12mA (@Vcc=4.5V) • Ordering Information Part Name Package Type Package Code (Previous Code) RD3ST24USE SSOP-8 pin PVSP0008KA –A (TTP
12	RD3.6S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
13	RD3.0FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
14	RD3CYD08	Renesas	IGBT Driver • Supplied on emboss taping for high-speed automatic mounting. • Supply voltage range : 2.0 to 3.6 V • Operating temperature range : –40 to +85°C • High drive current IOH short = –130 mA (typ) (@VCC = 3.3 V) • Low sink current IOL short = 45 mA (t
15	RD36S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
16	RD3.9S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
17	RD3.3S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
18	RD30FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
19	RD3.3FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
20	RD3.9FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil