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Renesas |
N-CHANNEL MOSFET FOR SWITCHING • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package QN7002-T1B-AT Pu |
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Desde 2024. D4U Semiconductor.
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