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N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss Ciss = 6000 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate t |
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N-Channel MOSFET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 3.9 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 9600 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP. • Designed for automotive ap |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP. • Designed for automotive ap |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 3.4 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 9510 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 G |
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N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.) • Built-in Gate protection diode ORDERING INFORM |
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N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.) • Built-in Gate protection diode ORDERING INFORM |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 6050 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 Gate |
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N-CHANNEL POWER MOS FET • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) • High current rating ID(DC) = ±80 A • Low input capacitance Ciss = 4900 pF TYP. • |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 3.9 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V) • 4.5 V gate drive type ORDERING INFO |
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N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) • Low Ciss Ciss = 5700 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A) • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP84N06C |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. ( |
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N-CHANNEL POWER MOS FET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 6500 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ M |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ M |
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N-CHANNEL POWER MOS FET • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ M |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 9600 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source |
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N-CHANNEL POWER MOS FET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5600 pF TYP. (TO-262) (TO-263) The information in this document is subject to change without notic |
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Desde 2024. D4U Semiconductor.
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