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Renesas |
N-CHANNEL POWER MOS FET • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) • Low Ciss: Ciss = 2500 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Sour |
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Renesas |
N-Channel MOSFET • Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −37.5 A) • Low Ciss: Ciss = 3200 pF TYP. (VDS = −25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HS |
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Renesas |
N-Channel MOSFET • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gate to Source ESD protection diode built in • Designed for automotive application and AEC-Q101 |
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Renesas |
N-Channel MOSFET Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive type Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP75N055YUK-E1-AY *1 Pure |
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Renesas |
N-Channel MOSFET Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF TYP. (VDS = 25 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP75N04VD |
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Renesas |
N-Channel MOSFET • Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A) • Logic level drive type • Gate to Source ESD protection diode built in • Designed for automotive application and AEC-Q101 qu |
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Renesas |
N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 35 A) • Channel temperature 175 degree rated (TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS |
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Renesas |
N-Channel MOSFET Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive type Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP75N04YUK-E1-AY *1 Pure S |
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Renesas |
N-Channel MOSFET Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP75N04VUK-E1-AY *1 NP75N04VUK-E2- |
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Renesas |
N-Channel MOSFET • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A) • Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Pa |
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Desde 2024. D4U Semiconductor.
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