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Renesas |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate t |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3200 pF TYP. • Logic level drive type (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage ( |
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Renesas |
P-channel Power MOSFET Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A ) Low input capacitance : Ciss = 5000 pF Typ. Designed for automotive application and AEC-Q101 qualified. Pb-free |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rated • Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3500 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information P |
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Renesas |
P-Channel Power MOSFET Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A ) Low input capacitance : Ciss = 3800 pF Typ. Built-in gate protection diode Designed for automotive application |
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Desde 2024. D4U Semiconductor.
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