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MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = |
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MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = |
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N-CHANNEL POWER MOSFET • Low on-state resistance RDS(on) = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 6300 pF TYP. (VDS = 10 V) ORDERING INFORMATION PART NUMBER 2SK4202-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free |
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Low-Power CK420BQ Derivative Benefits • Integrated 85-ohm differential terminations; saves 48 resistors compared to CK420BQ • LP-HCSL outputs; up to 50% power savings compared to standard CK420BQ • 64-pin TSSOP and VFQFPN packages; smallest board footprint • Available in -40° to |
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MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = |
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MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = |
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N-CHANNEL POWER MOSFET • Low on-state resistance RDS(on) = 13 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 4700 pF TYP. ORDERING INFORMATION PART NUMBER 2SK4201-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product |
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N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = |
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N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = |
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Desde 2024. D4U Semiconductor.
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