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Renesas |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline REJ03G0998-0200 (Previous: ADE-208-1346) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-2 |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Renesas Technology |
2SK215 • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = |
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Renesas |
N-CHANNEL MOSFET Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, ID = 2.0 A) Ordering Information Part Number |
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Renesas |
N-Channel Power MOSFET • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 |
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Renesas |
N-Channel Power MOSFET • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Renesas Technology |
2SK216 • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) |
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Renesas |
N-Channel Power MOSFET • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Desde 2024. D4U Semiconductor.
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