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FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER • Std., A, and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 64mA IOL) • Meets or exceeds JEDEC standard 18 |
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3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH • 32 serial input and output streams • 1,024 x 1,024 channel non-blocking switching at 2.048 Mb/s • Per-channel Variable Delay Mode for low-latency applications • Per-channel Constant Delay Mode for frame integrity applications • Automatic identific |
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3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail outpu |
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16-bit edge-triggered D-type flip-flop • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • VCC = 2.5V ± 0.2V |
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3.3V ZERO DELAY CLOCK BUFFER • Phase-Lock Loop Clock Distribution • 10MHz to 133MHz operating frequency • Distributes one clock input to one bank of five and one bank of four outputs • Separate output enable for each output bank • Output Skew < 250ps • Low jitter <200 ps cycle- |
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2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions − No DC path to Vcc or GND − 5V tolerant in OFF and ON state • 5V tolerant I/Os • Low RON - 4Ω typical • Flat RON characteristics over operating range • R |
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FAST CMOS OCTAL BUFFER/LINE DRIVER • A and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • Meets or exceeds JEDEC standard 18 specifications • Resistor outputs (-15mA IOH, 12m |
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HIGH-SPEED CMOS QUICKSWITCH 32-BIT BUS SWITCHES • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce • QS34X245 is 32-bit version of QS3245 • Flow-through pinout for easy layout • Undershoot clamp di |
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2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions – No DC path to VCC or GND – 5V tolerant in OFF and ON state • 5V tolerant I/Os • Low RON - 4Ω typical • Flat RON characteristics over operating range • R |
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CMOS ASYNCHRONOUS FIFO • First-In/First-Out dual-port memory • 256 x 9 organization (IDT7200) • 512 x 9 organization (IDT7201) • 1,024 x 9 organization (IDT7202) • Low power consumption — Active: 440mW (max.) —Power-down: 28mW (max.) • Ultra high speed—12ns access time • |
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HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM ◆ High-speed access – Commercial: 20/55ns (max.) – Industrial: 25ns (max.) – Military: 35/45/55/70ns (max.) ◆ Low-power operation – IDT7134SA Active: 700mW (typ.) Standby: 5mW (typ.) – IDT7134LA Active: 700mW (typ.) Standby: 1mW (typ.) HIGH-SPEED 4K |
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FAST CMOS OCTAL D REGISTERS • Std., A, and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 48mA IOL) • Meets or exceeds JEDEC standard 18 |
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FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) < 250ps • Low input and output leakage ≤ 1µA (max.) • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 20 |
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16-bit 3.3V to 5V level shifting transceiver • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCCA = 2.7V to 3.6V • VCCB = 5V ± 0.5V • CMOS power levels (0.4μ W typ. static) • Rail-to |
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2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions – No DC path to VCC or GND – 5V tolerant in OFF and ON state • 5V tolerant I/Os • Low RON - 4Ω typical • Flat RON characteristics over operating range • R |
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2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions − No DC path to Vcc or GND − 5V tolerant in OFF and ON state • 5V tolerant I/Os • Low RON - 4Ω typical • Flat RON characteristics over operating range • R |
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3.3V CMOS 16-BIT BUS TRANSCEIVER • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • All in |
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FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER • Std., A, and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 64mA IOL) • Meets or exceeds JEDEC standard 18 |
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FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) < 250ps • Low input and output leakage ≤ 1µA (max.) • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 20 |
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FAST CMOS BUFFER/CLOCK DRIVER • 0.5 MICRON CMOS Technology • Guaranteed low skew < 700ps (max.) • Low duty cycle distortion < 1ns (max.) • Low CMOS power levels • TTL compatible inputs and outputs • Rail-to-rail output voltage swing • High drive: -24mA IOH, +64mA IOL • Two indep |
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Desde 2024. D4U Semiconductor.
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