Renesas HZ1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HZ12A2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
2	HZ12B1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
3	HZ11A2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
4	HZ12B3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
5	HZ12C2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
6	HZ12C3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
7	HZ16-3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
8	HZ11	Renesas Technology	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. www.DataSheet4U.com Ordering Infor
9	HZ11A1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
10	HZ11A3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
11	HZ11B1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
12	HZ11B2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
13	HZ11C2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
14	HZ12B2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
15	HZ12C1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
16	HZ15-3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
17	HZ16-2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
18	HZ18-1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
19	HZ18-2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
20	HZ15-2-N	Renesas	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. Ordering Information Part No. HZ-N