| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Renesas |
16M SRAM • Single 1.8 V supply: 1.65 V to 2.2 V • Fast access time: 70 ns (max) • Power dissipation: Active: 3.6 mW/MHz (typ) Standby: 0.9 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common da |
|
|
|
|
Renesas Technology |
2048-word x 8-bit Line Memory • Five modes for various applications • Corresponds to digital TV system with 4 fsc sampling (PAL, NTSC) • Decoder signal output pin (fewer external circuits) • Asynchronous read/write operation — Separate address counters for read/write — No address |
|
|
|
|
Renesas |
8M SRAM • • • Single 5.0 V supply: 5.0 V ± 10 % Fast access time: 55 ns (max) Power dissipation: Active: 10 mW/MHz (typ) Standby: 7.5 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input a |
|
|
|
|
Renesas Technology |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
|
|
|
|
Renesas Technology |
16M Synchronous Late Write Fast Static RAM • 2.5 V ± 5% operation and 1.5 V (VDDQ) • 16M bit density • Internal self-timed late write • Byte write control (4 byte write selects, one for each 9-bit) • Optional ×18 configuration • HSTL compatible I/O • Programmable impedance output drivers • Di |
|
|
|
|
Renesas |
8M SRAM • • • Single 5.0 V supply: 5.0V ± 10 % Fast access time: 55 ns (Max) Power dissipation: Active: 10 mW/MHz (Typ) Standby: 7.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input an |
|
|
|
|
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
|
|
|
|
Renesas Technology |
Wide Temperature Range Version 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
|
|
|
|
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
|
|
|
|
Renesas Technology |
Wide Temperature Range Version 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
|
Desde 2024. D4U Semiconductor.
|