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Renesas |
High Speed Power Switching MOSFET High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) G 1 2 3 Absolute Max |
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Renesas |
High Speed Power Switching MOSFET |
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Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage www.D |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain |
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Renesas |
High Speed Power Switching Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C) • Gate to emitter vo |
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Renesas |
N-CHANNEL MOSFET FOR SWITCHING • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package QN7002-T1B-AT Pu |
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Renesas |
SWITCHING REGULATOR CONTROL • 500 kHz operation to MOS FET Output current : ±2 A Output rise time 60 ns, fall time 40 ns Modified totempole output method with small through current • Compact and ligh |
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Renesas |
High Speed Power Switching • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package nam |
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Renesas |
Silicon P Channel MOS FET Power Switching • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) • Low drive current • High speed switching • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G |
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Renesas |
+5V Powered RS-232 Transmitters/Receivers onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The family of devices offers a wide variety of RS-232 transmitter/receiver combinations to accommodate various applications (see Selection Table). The HI |
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Renesas |
RS-232 Transmitters/Receivers onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The family of devices offers a wide variety of high-speed RS-232 transmitter/receiver combinations to accommodate various applications (see Selection Tab |
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Renesas |
RS-232 Transmitters/Receivers onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The family of devices offers a wide variety of high-speed RS-232 transmitter/receiver combinations to accommodate various applications (see Selection Tab |
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Renesas |
RS-232 Transmitters/Receivers onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The family of devices offers a wide variety of high-speed RS-232 transmitter/receiver combinations to accommodate various applications (see Selection Tab |
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Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 o |
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Renesas Technology |
Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS000 |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source vol |
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Desde 2024. D4U Semiconductor.
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