| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Renesas |
Quad Operational Amplifier • • • • Wide range of supply voltage, and single power supply used Internal phase compensation Wide range of common mode voltage, and possible to operate with an input about 0 V Low electro-magnetic susceptibility level Measurement Condition Rf Vcc = |
|
|
|
|
Renesas |
Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger including a PROCHOT# indicator for system low voltage, adapter overcurrent, battery overcurrent, or overheating, with an array of SMBus programmable parameters for maximum flexibility. It also features a hardware-based adapter-current limit and batt |
|
|
|
|
Renesas |
Silicon N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: P |
|
|
|
|
Renesas |
N-Channel Power MOSFET • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) |
|
|
|
|
Renesas |
N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENESAS Package code: |
|
|
|
|
Renesas Technology |
Silicon N-Channel MOSFET • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
|
|
|
|
Renesas |
Silicon N-Channel MOSFET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
|
|
|
|
Renesas |
N-Channel IGBT • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package co |
|
|
|
|
Renesas |
USB3.0 to SATA3 BRIDGE CONTROLLER User Hardware Manual |
|
|
|
|
Renesas Technology |
Dual Operational Amplifier Wide range of supply voltage Single supply: 3 V to 36 V, Dual supplies: 1.5 V to ±18 V Wide range of common mode voltage, and possible to operate with an input about 0 V, and output around 0 V is available. Internally frequency compensated for |
|
|
|
|
Renesas |
LOW PHASE NOISE CLOCK MULTIPLIER • Packaged in 16-pin SOIC or TSSOP • Pb (lead) free package • Uses fundamental 10 - 27 MHz crystal or clock • Patented PLL with the lowest phase noise • Output clocks up to 156 MHz at 3.3 V • Low phase noise: -132 dBc/Hz at 10 kHz • Low jitter - 18 p |
|
|
|
|
Renesas |
Quad 125MHz Video CurrentFeedback Amplifier wide bandwidth and high slew rate, and is optimized for video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less bandwidth degradation at high closed loop gains than voltage feedback amplifiers. The low d |
|
|
|
|
Renesas |
Silicon N Channel Power MOS FET • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Ele |
|
|
|
|
Renesas |
Four Channel Power MOSFET Drivers • Excellent response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate • Low supply current • Wide operating voltage range • Pb-free available Applic |
|
|
|
|
Renesas |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH • 32 serial input and output streams • 1,024 x 1,024 channel non-blocking switching at 2.048 Mb/s • Per-channel Variable Delay Mode for low-latency applications • Per-channel Constant Delay Mode for frame integrity applications • Automatic identific |
|
|
|
|
Renesas |
N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS |
|
|
|
|
Renesas |
Charging System Safety Circuit |
|
|
|
|
Renesas |
Silicon N-Channel MOSFET • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G |
|
|
|
|
Renesas |
(HD64x306x) Hardmanual utions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble wit |
|
|
|
|
Renesas Technology |
Dual 2 to 3W Audio Power Amplifiers |
|
Desde 2024. D4U Semiconductor.
|