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2SC535 Collector to emitter saturation voltage VCE(sat) — 0.17 — Gain bandwidth product fT 450 940 — Collector output capacitance Cob — 0.9 1.2 Power gain PG 17 20 — Noise figure NF — 3.5 5.5 Input admittance (typ) yie 1.3 + j5.3 Reverse tran |
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Octal D-type Transparent Latches • High Speed Operation: tpd (D to Q) = 16 ns typ (CL = 50 pF) • High Output Current: Fanout of 15 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C |
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NPN SILICON RF TRANSISTOR • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gai |
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Silicon NPN Transistor ut admittance (typ) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 VBE VCE(sat) fT Cob PG NF yie Min 30 20 4 — 60 — — 450 — 17 — Typ — — — — — 0.72 0.17 940 0.9 20 3.5 1.3 + j5.3 –0.078 – j0.41 32 – j10 0.08 + j0.82 Max — — — 0.5 200 — — — 1.2 — 5.5 Un |
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Octal D-type Flip Flops • VCC = 2.0 V to 5.5 V • All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) • Typical VO |
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NPN SILICON RF TRANSISTOR • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel • Magazine case • 1 |
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Renesas |
2SC5336 • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel • Magazine case • 1 |
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1-of-8 Decoder • Output Polarity Control • Data Demultiplexing Capability • Multiple Enables for Expansion • Outputs Source/Sink 24 mA • Ordering Information Part Name Package Type Package Code Package Abbreviation Taping Abbreviation (Quantity) HD74AC538FPEL S |
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Renesas |
Octal D-type Transparent Latches • VCC = 2.0 V to 5.5 V • All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) • Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) • Typical V |
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NPN SILICON RF TRANSISTOR • High gain: S21e = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz 2 • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power minimold package with improved gain from the 2SC4703 |
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Renesas |
Octal D-type Flip-Flops • High Speed Operation: tpd (Clock to Q) = 18 ns typ (CL = 50 pF) • High Output Current: Fanout of 15 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = |
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Desde 2024. D4U Semiconductor.
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