Renesas C43 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4308	Renesas	2SC4308 tter cutoff current IEBO — — 10 µA VEB = 3 V, IE = 0 DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA Gain bandwidth product fT 1.5 2.5 — GHz VCE = 5 V, IC = 50 mA Collector output capacitance Cob — 4.0 — pF VCB = 10 V, IE = 0, f
2	2SC4331	Renesas	SILICON POWER TRANSISTOR a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKA
3	2SC4308	Renesas	Silicon NPN Transistor — — — — 2.5 4.0 Max — — 1 10 200 — — Unit V V µA µA GHz pF Test conditions IC = 100 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 p
4	2SC4331-Z	Renesas	SILICON POWER TRANSISTOR a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKA