Renesas B56 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B562	Renesas	2SB562 se to emitter voltage VBE — Gain bandwidth product fT — Collector output capacitance Cob — Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 Typ — — — — — –0.2 –0.8 350 38 Max — — — –1.0 240 –0.5 –1.0 — — Unit
2	2SB561	Renesas	Silicon PNP Transistor mitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob — –0.2 –0.5 — –0.75 –1.0 — 350 — — 20 — Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240
3	B561	Renesas	2SB561 mitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob — –0.2 –0.5 — –0.75 –1.0 — 350 — — 20 — Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240
4	2SB562	Renesas	Silicon PNP Transistor se to emitter voltage VBE — Gain bandwidth product fT — Collector output capacitance Cob — Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 Typ — — — — — –0.2 –0.8 350 38 Max — — — –1.0 240 –0.5 –1.0 — — Unit