Renesas AT2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HAT2020R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1157-1200 (Previous: ADE-208-439J) Re
2	HAT2266H	Renesas Technology	Silicon N-Channel Power MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.2 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 1 234 4
3	HAT2024R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1159-0500 (Previou
4	HAT2016R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1 234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1156-1000 (Previo
5	HAT2140H	Renesas	Silicon N-Channel Power MOSFET • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 12.5 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1192-0400 (Previous:
6	HAT2187WP	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G0535-0500 Rev.5.00 Sep.02,2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1
7	HAT2085R	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1181-0200 (Previous: ADE-208-1232) Rev.2.00 Sep 07, 2005 1, 2, 3
8	HAT2203C	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance RDS(on) = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1 1. Source 2
9	HAT2221C	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1240-0400 Rev.4.0
10	HAT2282C	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 J
11	HAT2057RA	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 1.5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2057RA Absolute Maximum Ratings (Ta = 25°C)
12	HAT2168N	Renesas	Silicon N-Channel MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) • Power Supply for Server and Telecom (Indoor use) Outline RENESAS Package code: PTSP0008DC-A
13	HAT2044R	Renesas	Silicon N-Channel Power MOSFET • Capable of 2.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 6.5 mΩ typ (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 RE
14	HAT2040R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance RDS (on) = 6.2 mΩ typ • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1168-0600 (Prev
15	HAT2022R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1158-1200 (Previous: ADE-208-440J) Re
16	HAT2029R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1164-0600 (Previ
17	HAT2025R	Renesas	Silicon N-Channel Power MOSFET • High speed switching • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1160-0500 (Pre
18	HAT2027R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1162-0800 (Previ
19	HAT2168H	Renesas Technology	Silicon N-Channel MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 RE
20	HAT2141H	Renesas	Silicon N-Channel Power MOSFET • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 22 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1193-0700 (Previous: A