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Renesas |
Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger including a PROCHOT# indicator for system low voltage, adapter overcurrent, battery overcurrent, or overheating, with an array of SMBus programmable parameters for maximum flexibility. It also features a hardware-based adapter-current limit and batt |
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Renesas |
Silicon N-Channel MOSFET |
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Renesas |
SILICON POWER TRANSISTOR low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRA |
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Renesas |
8-PIN DIP PHOTOCOUPLER • Long creepage distance (8 mm MIN.: PS9552L1, PS9552L2) • Large peak output current (2.5 A MAX., 2.0 A MIN.) • High speed switching (tPLH, tPHL = 0.5 μs MAX.) • UVLO (Under Voltage Lock Out) protection with hysteresis • High common mode transient im |
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Renesas |
8-PIN DIP PHOTOCOUPLER • Long creepage distance (8 mm MIN.: PS9552L1, PS9552L2) • Large peak output current (2.5 A MAX., 2.0 A MIN.) • High speed switching (tPLH, tPHL = 0.5 μs MAX.) • UVLO (Under Voltage Lock Out) protection with hysteresis • High common mode transient im |
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Renesas |
Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller |
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Renesas |
OSCILLATOR (all) • Packaged as 20-pin SSOP (QSOP) • Pb-free packaging • Operating voltages of 3.0 V to 5.5 V • Industrial temperature available Features (specific) ICS552-01 (for A mode) • Contains on-chip multiplier with selections of x1, x1.33, x2, x2.66, x3, |
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Renesas Technology |
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER q Minimum instruction execution time Mask ROM version .............................................................. 0.5 µs (at 6 MHz oscillation frequency, in high-speed through-mode) One Time PROM version ........................................... |
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Renesas Technology |
16-Bit Single-Chip Microcomputer careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellec |
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Renesas |
8-PIN DIP PHOTOCOUPLER • Long creepage distance (8 mm MIN.: PS9552L1, PS9552L2) • Large peak output current (2.5 A MAX., 2.0 A MIN.) • High speed switching (tPLH, tPHL = 0.5 μs MAX.) • UVLO (Under Voltage Lock Out) protection with hysteresis • High common mode transient im |
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Renesas |
8-PIN DIP PHOTOCOUPLER • Long creepage distance (8 mm MIN.: PS9552L1, PS9552L2) • Large peak output current (2.5 A MAX., 2.0 A MIN.) • High speed switching (tPLH, tPHL = 0.5 μs MAX.) • UVLO (Under Voltage Lock Out) protection with hysteresis • High common mode transient im |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-( |
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Renesas |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK2552 PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA |
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Renesas |
Integrated Buffer a slew rate of 15V/µs. The output current is rated at 30mA continuous, 140mA peak. The VCOM amplifiers are rated for 60mA continuous output current and 200mA peak. They also feature higher slew rate and bandwidth for use in error cancellation circuit |
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Renesas |
OSCILLATOR (all) • Packaged as 20-pin SSOP (QSOP) • Pb-free packaging • Operating voltages of 3.0 V to 5.5 V • Industrial temperature available Features (specific) ICS552-01 (for A mode) • Contains on-chip multiplier with selections of x1, x1.33, x2, x2.66, x3, |
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Renesas |
OSCILLATOR (all) • Packaged as 20-pin SSOP (QSOP) • Pb-free packaging • Operating voltages of 3.0 V to 5.5 V • Industrial temperature available Features (specific) ICS552-01 (for A mode) • Contains on-chip multiplier with selections of x1, x1.33, x2, x2.66, x3, |
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Renesas |
Differential Amplifier • 3 Fixed Gain Options . . . . . . . . . . . . . . . . . . . . . . . 2, 4, or 5V/V • Constant Bandwidth Over Gain . . . . . . . . . . . . . . . . . . 1.4GHz • Differential Slew Rate . . . . . . . . . . . . . . . . . . . . . . . 5,600V/µs • 2VP-P, 2-t |
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Renesas |
Ultra-High Dynamic Range Differential Amplifier • Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . . . . . . 4.0GHz • Input Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . 0.85nV/√(Hz) • Differential Slew Rate . . . . . . . . . . . . . . . . . . . . . . . 5,600V/µs • 2VP-P, |
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Renesas |
2SC4552 3C61-XX LSD3C62-XX LSD3C64-XX LSD3C65-XX LSD3C63-XX GaP λP (nm) Vf(v) @ 20mA Min Max 2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4 Iv(mcd) @ 10mA Min 1.5 2.2 2.5 3.5 2.5 1.5 2.2 2.5 3.5 2.5 PIN NO.1 8.0 (0.315") 11.0 (0.433") 2.0X4= 8.0 (0.315") em |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-( |
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Desde 2024. D4U Semiconductor.
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