Renesas 2SB Hoja de datos

No.	parte #	Fabricante	Descripción
1	B857	Renesas	2SB857 Max — — — –1 320 — –1 –1 — V V MHz Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A2 I C = –0.1 A2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC cur
2	B962	Renesas	2SB962
3	2SB1392	Renesas	Silicon PNP Transistor — — voltage Base to emitter saturation VBE(sat) — — voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit — V — V — V –10 µA –10 200 — –1.0 V –1.0 V –1.2 V Test conditions IC = –10 µA, IE = 0 IC = –50
4	B562	Renesas	2SB562 se to emitter voltage VBE — Gain bandwidth product fT — Collector output capacitance Cob — Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 Typ — — — — — –0.2 –0.8 350 38 Max — — — –1.0 240 –0.5 –1.0 — — Unit
5	B1628	Renesas	2SB1628 high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • High current capacitance • Low collector saturation voltage QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devic
6	B799	Renesas	2SB799
7	B800	Renesas	2SB800
8	B806	Renesas	2SB806
9	2SB1002	Renesas	Silicon PNP Transistor — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 µA VCB = –50 V, I
10	2SB647A	Renesas Technology	PNP Transistor
11	2SB1001	Renesas	Silicon PNP Transistor tage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(B
12	B1571	Renesas	2SB1571 • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) Collector
13	B804	Renesas	2SB804
14	B805	Renesas	2SB805
15	2SB561	Renesas	Silicon PNP Transistor mitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob — –0.2 –0.5 — –0.75 –1.0 — 350 — — 20 — Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240
16	2SB647	Renesas Technology	PNP Transistor
17	B561	Renesas	2SB561 mitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob — –0.2 –0.5 — –0.75 –1.0 — 350 — — 20 — Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240
18	2SB858	Renesas	Silicon PNP Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t
19	B1572	Renesas	2SB1572 • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −80 Collector to Emitter Voltage VCEO −60 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) Collector
20	2SB739	Renesas	PNP Transistor