ROHM RBR Hoja de datos

No.	parte #	Fabricante	Descripción
1	RBR3LAM40B	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
2	RBR10BM60A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStru
3	RBR10NS40A	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●
4	RBR3LAM40CTF	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF Dimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 (2) 1.50±0.20 0.95±0.10 3.70±0.20 4.70±0.14 1.4 4.4 Datasheet AEC-Q101 Qualified Land Size Figure (Unit : mm) 2.0 PMDTM Str
5	RBR15BM60A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStru
6	RBR20BM40A	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 ●
7	RBR20BM60A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStru
8	RBR20T60ANZ	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type ① 1.2 1.3 0.8 (1) (2) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN 5.0±0.2 8.0±0.2 14.0±0.5 12.0±0.2 15.0± 0.4 0.2 2.6±0.5 0.75±00..015 1 Manufactur
9	RBR30NS40A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF BR30NS 40A 1 (1) (3) 3.5 2.5 8.5 16 lLand size figure (Unit : mm) 11 9.9 2.5 2.54 TO-263S lStructure 2.54 (2) Cathode lConstruction Silicon epitaxial planar type ROHM : TO-263S JEITA :
10	RBR30NS60A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF BR30NS 60A 1 (1) (3) 9.9 2.5 2.54 TO-263S lStructure ROHM : TO-263S JEITA : SC-83 1 : Manufacture date 2.54 (2) Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Un
11	RBR40NS60A	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●
12	RBR10BM40A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF 1 1.6 1.6 ROHM : TO-252 JEITA : SC-63 1 : Manufacture date TO-252 2.3 2.3 lStructure Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions
13	RBR15BM30A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture date lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStructu
14	RBR1LAM30A	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
15	RBR10T40ANZ	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF 1.2 1.3 0.8 1 5.0±0.2 8.0±0.2 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar type 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 0.75±00..015 1 Manufacture date (1) (2) (3) A
16	RBR3LAM30A	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
17	RBR5LAM30A	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
18	RBR5LAM30B	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
19	RBR3LAM60A	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
20	RBR5LAM30BTF	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF Dimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 (2) 1.50±0.20 0.95±0.10 3.70±0.20 4.70±0.14 1.4 4.4 Datasheet AEC-Q101 Qualified Land Size Figure (Unit : mm) 2.0 PMDTM Str