ROHM RBQ Hoja de datos

No.	parte #	Fabricante	Descripción
1	RBQ10B65A	Rohm	Schottky Barrier Diode 1)Power mold type. (CPD) 2)Low IR 9.5±0.5 1.6 1.6 2.0 6.0 1/4 2012.01 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RBQ10B65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(µA) Ta=125°C FORWARD CURRENT:IF(A) 1 Ta=150°C 1
2	RBQ10NS45A	Rohm	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●
3	RBQ10BM45A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR 12 1.6 1.6 TO-252 2.3 2.3 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date 2 : Serial number lStructure (2) Cathode lConstruction Silicon epitaxial planar
4	RBQ10BM65A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR 12 1.6 1.6 TO-252 2.3 2.3 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date 2 : Serial number lStructure (2) Cathode lConstruction Silicon epitaxial planar
5	RBQ30NS45B	ROHM	Schottky Barrier Diode High reliability Power mold type Low IR ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs)
6	RBQ30T45ANZ	ROHM	Schottky Barrier Diode 1) Cathode common type. 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar lDimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 1 1.2 1.3 0.8 (1) (2) (3) RO
7	RBQ30TB45BNZ	ROHM	Schottky Barrier Diode 1) Power Mold Type 2) High reliability 3) Low IR lConstruction Silicon epitaxial planar type 5.0±0.2 8.0 1.6 MAX ① 14.0±0.5 1.2 1.3 0.8 (1) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN (2 pin) 2.6±0.5 0.75±00..015 1 Manufacture date (1) Cathode
8	RBQ10T45ANZ	ROHM	Schottky Barrier Diode 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.2±0.2 ① Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date Packing Di
9	RBQ10T65ANZ	ROHM	Schottky Barrier Diode 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.2±0.2 ① Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date Packing Di
10	RBQ15BM45A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6
11	RBQ15BM65A	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6
12	RBQ20T45ANZ	ROHM	Schottky Barrier Diode 1) Cathode common type. 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar lDimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 1 1.2 1.3 0.8 (1) (2) (3)
13	RBQ10B45A	Rohm	Schottky Barrier Diode 1)Power mold type.(CPD) 2)Low IR 1.5±0.3 6.0 RBQ10B45A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C Ta=75°C 1000 Ta=125°C 100 Ta=75°C 10 0.1 Ta=25°C 1 Ta=25°C 0.1 Ta=-25°C Ta=-25
14	RBQ10NS65A	Rohm	Schottky Barrier Diode rights reserved. 1/4 2011.11 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RBQ10NS65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C 1000 Ta=125°C 100 Ta=75°C Ta=75°C 10 0.1
15	RBQ10T45A	Rohm	Schottky Barrier Diode 1) Cathode common type. 2) Low IR 3) High reliability 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Anode Cathode Anode for d lConstruction de Silicon epitaxial planar 1 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 ommeen
16	RBQ10T65A	Rohm	Schottky Barrier Diode 1) Cathode common type. 2) Low IR 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 4.5±00..31 10.0±00..31 φ3.2±0.2 2.8±00..21 0.4 0.2 15.0± 12.0±0.2 ① 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 14.0±0.5 2.6
17	RBQ20NS65A	Rohm	Schottky Barrier Diode 1)Cathode Common Dual type.(LPDS) 2)Low IR. BQ20NS 65A ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② lTaping dimensions (Unit : mm) ③ www.DataSheet.co.kr lAbsolute maximum r
18	RBQ10NS100AFH	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure
19	RBQ10T100ANZ	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Stick Reel Size(mm) - Taping Width(mm) - ●Structure
20	RBQ10NS45AFH	ROHM	Schottky Barrier Diode High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure