| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ROHM Electronics |
2SD1862 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SD1766 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 2SD1758 1.5±0.3 6.5±0.2 0.2 5.1+ −0 |
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ROHM Electronics |
2SD1858 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) |
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Desde 2024. D4U Semiconductor.
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