| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Rohm |
NPN Transistor |
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Rohm |
2SC2673 |
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Rohm |
NPN Transistor |
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Rohm |
NPN Transistor |
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Rohm |
Medium Power Amp / NPN Silicon Transistor |
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Rohm |
2SC1740 |
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Rohm |
2SC3271F 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. !External dimensions (Units: mm) (1) 2SC4061K 0.4 (3) 1.6 2.8 0.95 0.95 (2) !Absolute maximum ratings (Ta=25°C) Param |
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Rohm |
Epitaxial Planar NPN Silicon Transistor |
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Rohm |
2SC2063 |
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Rohm |
EPITAXIAL PLANAR NPN SILICON TRANSISTOR |
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Rohm |
Medium Power Amp / NPN Silicon Transistors |
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Rohm |
2SC2926 |
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Rohm |
2SC5511 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1 |
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Rohm |
Transistor |
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Rohm |
2SC2058S 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. !External dimensions (Units : mm) 2SC5659 0.2 1.2 0.32 1.2 0.8 (2) (3) (1) 0.2 0.4 0.4 0.8 ROHM : VMT3 Unit V V V mA W ˚C ˚C 0.13 0to0.1 |
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Rohm |
2SC3377 |
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ROHM |
NPN SIlicon Transistor |
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Rohm |
2SC1615 |
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Rohm |
Triple Diffusied NPN Silicon Transistor |
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Rohm |
2SC4137 |
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Desde 2024. D4U Semiconductor.
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