| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Freescale Semiconductor |
RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Opt |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Opt |
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Motorola Semiconductor Products |
RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Q |
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Freescale Semiconductor |
RF Power Field Effect Transistors • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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RFE |
SCHOTTKY BARRIER RECTIFIER • Low Forward Voltage Drop • High Current Capability • High Reliability • Low Power Loss, High Efficiency MECHANICAL DATA • Case: Molded Plastic (UL 94V-0 rated) • Lead: Axial leads, Solderable per MIL-STD-202, Method 208 • Polarity: Color band denot |
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Freescale Semiconductor |
RF Power FET • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per |
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Motorola Semiconductor Products |
RF Power FET • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoH |
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Freescale Semiconductor |
RF Power Field Effect Transistors • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Device can be used Single--Ended or in a Push--Pull Configuration • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 30 V to 50 V for Extended Power Range • Su |
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Desde 2024. D4U Semiconductor.
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