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RF Micro Devices |
Low Noise Amplifier ■ 27dB Gain at 1.575GHz ■ 1.4dB Noise Figure at 1.575GHz ■ Single 3.3V Supply Operation ■ Integrated Active Bias Circuit ■ Hermetic Package ■ MIL-STD-883 Screening Applications ■ GPS Receivers ■ Military and Industrial Functional Block Diagram Orde |
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RF Micro Devices |
high performance SiGe HBT MMIC amplifier Internally Matched to 50 800MHz to 1300MHz High Input/Output Intercept Low Noise Figure: 1.2dB Typ. at 900MHz Low Power Consumption Single Voltage Supply Opera- tion Internal Temperature Com- pensation Applications Receivers, GPS, RFID |
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RF Micro Devices |
high performance SiGe HBT MMIC amplifier High Input/Output Intercept Low Noise Figure: 1.3dB typ. at 1900MHz Low Power Consumption Single Voltage Supply Opera- tion Internal Temperature Com- pensation Applications Receivers, GPS, RFID Cellular, Fixed Wireless, Land Mobile Par |
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RF Micro Devices |
LOW NOISE AMPLIFIER Low Power Consumption, 5.7mA at 3.3V External Input Noise Match High Gain and Low Noise, 20dB and 1.1dB respectively at 900MHz Operates from 2.7V to 3.3V Power Shutdown Capability using VPC 500V ESD, Class 1B Small Package: SOT-363 Hi |
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RF Micro Devices |
Low-Noise SiGe HBT MMIC Amplifier High Gain, 28.6 dB at 1575 MHz Low Noise Figure, 1.4 dB at 1575 MHz Low Power Consumption 10.5 mA at +3.3 V Battery Operation:+2.7 V to +3.6 V (Active Bias) Fully Integrated Matching Class 2 ESD Protection (>2000 V HBM) Applications Hi |
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Desde 2024. D4U Semiconductor.
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