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RF Micro Devices |
Integrated Power Amplifier ■ POUT = 24dBm, 25% PAE, with 3.3V, 20MHz LTE DL, CFR 7.5dB ■ ACP <-50dBc with DPD ■ 28dB Gain over 1600MHz to 2000MHz ■ Instantaneous P3dB = 32dBm at 3.3V ■ Designed to Support Flexible VCC 0.5V to 4.5V for PAE Optimization ■ Envelope Tracking Compa |
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RF Micro Devices |
5V Linear Power Amplifier ■ Flexible Bias for DPD, APD or Uncorrected Linear Applications ■ Uncorrected WCDMA Pout at 25.5dBm, 48dBc ACPR, PAR 10dB at 5V ■ Gain = 17dB at 945MHz ■ Externally Matched for Band Selection ■ VCC = 3V to 7V ■ No Power Supply Sequencing ■ No Negativ |
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RF Micro Devices |
GaAs HBT 2-Stage Power Amplifier ■ High Gain 20.5dB at 2.14GHz ■ High Linearity, OIP3 = 47.5dBm at 2.14GHz ■ Off-chip Interstage for Design Flexibility ■ Independent Bias Control for Each Stage ■ Power-down Capability ■ 700MHz to 2700MHz Operation Applications ■ GaAs Driver for Base |
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RF Micro Devices |
Integrated Power Amplifier ■ POUT = 24dBm, 26% PAE, with 3.3V, 20MHz LTE DL, CFR 7.5dB ■ ACP <-50dBc with DPD ■ 28dB Gain over 700MHz to 950MHz ■ Instantaneous P3dB = 32dBm at 3.3V ■ Designed to Support Flexible VCC 0.5V to 4.5V for PAE Optimization ■ Envelope Tracking Compati |
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RF Micro Devices |
HIGH LINEARITY POWER AMPLIFIER Frequency Range: 17.7GHz to 19.7GHz Small Signal Gain: 25dB IM3 at +17dBm (SCL): +52dBc IM3 at +21dBm (SCL): +43dBc IM3 at +24dBm (SCL): +32.5dBc OIP3 at +24dBm (SCL): +40dBm P1dB: +31dBm RL (Input): 12dB RL (Output): 8dB VD: 5.5V |
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RF Micro Devices |
Power Amplifier High Linearity: OIP3 = 44dBm at 900MHz Low Noise: NF = 3.5dB at 900MHz Low DC Power: 5V, 90mA 400MHz to 2700MHz Operation Applications GaAs Pre-Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure Class AB |
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RF Micro Devices |
Hybrid Power Doubler amplifier Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under All Terminations Extremely High Output Capability 22.5dB Min. Gain at 1600MHz 450mA Max. at 24V |
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RF Micro Devices |
GaAs HBT POWER AMPLIFIER -60dBc ACPR at 16dBm WCDMA 0.5W Output Power (P1dB) Excellent Linearity to DC Power Ratio NF=3.0dB at 880MHz Single-Supply 5V Operation Class 1C (1000V) HBM ESD 1 RFIN 2 3 Applications GaAs Pre-Driver for Base Station Amplifiers |
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RF Micro Devices |
Integrated Power Amplifier Module ■ POUT = 24dBm, 25% PAE, with 3.3V, 20MHz LTE DL, CFR 7.5dB ■ ACP <-50dBc with DPD ■ 28dB Gain over 1750MHz to 2200MHz ■ Instantaneous P3dB = 32dBm at 3.3V ■ Designed to Support Flexible VCC 0.5V to 4.5V for PAE Optimization ■ Envelope Tracking Compa |
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RF Micro Devices |
Hybrid Power Doubler amplifier ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 24.5dB Min. Gain at 1218MHz ■ 480mA Max. at 24V |
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RF Micro Devices |
Hybrid Power Doubler amplifier ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 22.5dB Min. Gain at 1218MHz ■ 480mA Max. at 24V |
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RF Micro Devices |
GaAs HBT Power Amplifier -60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power (P1dB) NF = 3.8dB at 2140MHz Gain = 15.7dB at 2140MHz Power-Down Capability NC RFIN RFIN NC 1 2 3 4 5 NC VBIAS 13 12 NC 11 RFOUT/VCC 10 RFOUT/VCC 9 NC 8 NC AMP Applications PA Stag |
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RF Micro Devices |
Hybrid Power Doubler amplifier module ■ Low Current ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ High Output Capability ■ 27.0dB Min. Gain at 1003MHz ■ 385mA Max. at |
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RF Micro Devices |
Hybrid Power Doubler amplifier module ■ Extremely High Output Capability ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Unconditionally Stable Under All Terminations ■ 22.5dB Min. Gain at 1218MHz ■ 550mA Max. ■ Devices works at V+ between 24V and 34V App |
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RF Micro Devices |
Hybrid Power Doubler amplifier module ■ Extremely High Output Capability ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 27.0dB Min. Gain at 1218MHz ■ 450mA Max. at 24VDC Applications ■ 45MHz to |
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RF Micro Devices |
3-Stage Power Amplifier Module ■ WCDMA Power at 2140MHz = 24dBm with -45dBc ACPR ■ Flexible External Matching for Band Selection ■ Gain = 38dB at 2140MHz ■ P1dB = 33dBm at 2140MHz ■ 5V Supply ■ Independent Bias Control for Each Stage ■ Power-down Capability ■ Integrated Power Dete |
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RF Micro Devices |
WiFi Integrated PA Module |
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RF Micro Devices |
WiFi Integrated PA Module ■ POUT = 23dBm, 5V, 11ac, 80MHz MCS9 @ 1.8% EVM ■ POUT = 25dBm, 5V, 11n, 20/40 MHz, MCS7 @ 3% ■ Typical Gain = 33dB ■ 3.3v Functionality ■ High PAE ■ Integrated Regulator ■ Input and Output Matched to 50Ω Integrated Power Detector, Harmonic filter, a |
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RF Micro Devices |
WiFi Integrated PA Module ■ POUT = 23dBm, 5V, 11ac, 80MHz MCS9 @ 1.8% EVM ■ Pout = 25dBm, 5V, 11n, 20/40 MHz, MCS7 @ 3% ■ Typical Gain = 33dB ■ High PAE ■ Input and Output Matched to 50Ω ■ Integrated Power Detector, Harmonic filter, and notch filter NC 1 GND 2 RFIN 3 GND 4 V |
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RF Micro Devices |
class AB Heterojunction Bipolar Transistor (HBT) power amplifier P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT=25dBm at 2.5% EVM, VCC 5V, 680mA On-Chip Output Power Detector Input Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down control <1s Application |
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Desde 2024. D4U Semiconductor.
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