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RF Micro Devices |
LINEAR POWER AMPLIFIER NC 1 Single Power Supply 3.0V to 3.6V 34dB Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +18dBm, 2.5%EVM (typ.), 130mA@VCC =3.3V NC Match RF IN 2 Match Match 11 RF OUT RF IN 3 10 RF OUT |
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RF Micro Devices |
W-CDMA LINEAR POWER AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • 27.5dBm Linear Output Power • 42% Peak Linear Efficiency • -41dBc ACLR @ ±5MHz 16 RF IN 1 15 14 Interstage MN 13 12 VCC2 NC IM • Integrated Power Detector • HSDPA Capable GND 2 IMN Q1 11 VCC2 Q2 Bia |
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RF Micro Devices |
LOW POWER LINEAR AMPLIFIER • Single 3V to 6V Supply • 10dBm to 20dBm Ultra Linear Output Power • 14dB Gain at 2.14GHz • Power Down Mode • 800MHz to 2500MHz Operation RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT BIAS CIRCUIT Ordering Infor |
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RF Micro Devices |
3V / 2.45GHz LINEAR POWER AMPLIFIER • Single Power Supply 3.0V to 5.0V • +30dBm Saturated Output Power • 25dB Small Signal Gain • High Linearity VCC2 12 Input Match VCC1 11 Interstage Match 10 Output Match RF IN 1 VCC2 9 RF OUT • 2400MHz to 2500MHz Frequency Range NC 2 8 RF |
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RF Micro Devices |
DUAL-BAND FRONT-END MODULE Single-Module Radio Front-End Single Supply Voltage 3.0V to 3.6 V Integrated 2.5GHz & 5GHZ PA’s, Diplexer LNA for both High and Low Band, Filters & Switches for TX & RX POUT=18dBm, 11g, OFDM, <3% EVM and POUT=16dBm, 11a, OFDM, <4% EVM Applica |
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RF Micro Devices |
3V GSM POWER AMPLIFIER Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM 16 15 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND |
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RF Micro Devices |
LINEAR POWER AMPLIFIER 8 Applications IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Functional Block Diagram Product Descriptio |
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RF Micro Devices |
LINEAR POWER AMPLIFIER Single Power Supply 3.0V to 5.0V +21dBm, <4.0%EVM, 185mA@VCC =3.3V 28dB Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +23dBm, <4%EVM, 250mA@VCC =5.0V RF IN 2 NC 11 RF OUT Input Match Inters |
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RF Micro Devices |
TRI-MODE POWER AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • 28dBm Output Power • 41% Peak Linear Efficiency for Cell Band 24 VREG - PCS 1 RF IN - PCS 2 VREG - CELL 3 VMODE - CELL 4 RF IN - CELL 5 VCC1 - CELL 6 7 NC VCC BIAS 23 22 21 20 19 18 NC 17 NC 16 RF OUT - |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • VRAMP Limiter • Complete Power Control Solution • +35dBm GSM Output Power at 3.5V DCS/PCS IN 37 BAND SELECT 40 TX ENABLE 41 VBATT 42 VBATT 43 VRAMP 45 GSM IN 48 Fully Integrated Power Control Circuit 31 DCS/PCS OUT • +33dBm DCS/PCS Output Power |
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RF Micro Devices |
SINGLE-BAND FRONT END MODULE Single Module Radio Front End Single Supply Voltage 3.0V to 5V Integrated 2.4GHz to 2.5GHz b/g Amplifier LNA, TX/RX Switch, PDETECT Coupler POUT=17dBm, 11g, OFDM at <3% EVM, 21dBm 11b Meeting 11b Spectral Mask Low Height Package, Suited for |
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RF Micro Devices |
11B/G WLAN SP3T SWITCH SP3T Switch Switch Control Voltage 2.1to 5V (Typical 3.0V) Applications EEE802.11b/g WLAN Appli- cations Functional Block Diagram Product Description The RF5510 is a SP3T switch designed in a small 0.88mmx0.80mmx0.38mm FLIP CHIP die. This devic |
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RF Micro Devices |
3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER • Single 3.3V Power Supply • +30dBm Saturated Output Power VCC VCC NC NC • 26dB Small Signal Gain • High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13 • 1800MHz to 2800MHz Frequency Rang |
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RF Micro Devices |
3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER • Single 3.3V Power Supply • +30dBm Saturated Output Power VCC VCC NC NC • 26dB Small Signal Gain • High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13 • 1800MHz to 2800MHz Frequency Rang |
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RF Micro Devices |
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER • Single 3V Supply • 27dBm Linear Output Power • 26dB Linear Gain • 40% Linear Efficiency • On-board Power Down Mode Q1B 18 NC 20 VREG1 1 VCC BIAS 2 19 17 NC 16 15 NC 14 NC Bias VREG2 3 VS2 4 BIAS GND 5 6 NC 13 VCC1 12 VCC1 11 NC 7 8 RF OUT |
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RF Micro Devices |
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER • Single 3V Supply • 27dBm Linear Output Power • 26dB Linear Gain • 40% Linear Efficiency • On-board Power Down Mode Q1B 18 NC 20 VREG1 1 VCC BIAS 2 19 17 NC 16 15 NC 14 NC Bias VREG2 3 VS2 4 BIAS GND 5 6 NC 13 VCC1 12 VCC1 11 NC 7 8 RF OUT |
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RF Micro Devices |
LOW POWER LINEAR AMPLIFIER • Single 3V to 6V Supply • 10dBm to 20dBm Ultra Linear Output Power • 14dB Gain at 2.14GHz • Power Down Mode • 800MHz to 2500MHz Operation RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT BIAS CIRCUIT Ordering Infor |
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RF Micro Devices |
3V GSM POWER AMPLIFIER • Single 2.7V to 4.8V Supply Voltage • +36dBm Output Power at 3.5V APC1 APC2 VCC NC • 32dB Gain with Analog Gain Control • 57% Efficiency 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 16 VCC1 GND1 RF IN GND2 1 2 3 4 5 VCC2 15 14 13 • 800MHz to 950 |
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RF Micro Devices |
3V DCS POWER AMPLIFIER • Single 2.7V to 4.8V Supply Voltage • +33dBm Output Power at 3.5V • 27dB Gain with Analog Gain Control VCC2 VCC2 VCC2 2f0 16 VAT EN 1 RF IN 2 GND1 3 VCC1 4 5 APC1 15 14 13 12 RF OUT 11 RF OUT 10 RF OUT 9 NC • 50% Efficiency • 1700MHz to 195 |
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RF Micro Devices |
LINEAR POWER AMPLIFIER • Single 3.3V Power Supply • +30dBm Saturated Output Power VCC VCC NC NC • 26dB Small Signal Gain • High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13 • 1800MHz to 2800MHz Frequency Rang |
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Desde 2024. D4U Semiconductor.
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