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RF Micro Devices |
GENERAL PURPOSE AMPLIFIER • DC to >6000MHz Operation • Internally Matched Input and Output • 22dB Small Signal Gain GND GND GND • +2.0dB Noise Figure • +11.5dBm Output P1dB 9 NC 8 RF OUT 7 NC 12 NC 1 RF IN 2 NC 3 4 GND 11 10 • Footprint Compatible with Micro-X 5 GND |
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RF Micro Devices |
(RF3023 / RF3024) Broadband Medium Power SPDT Switch • 10 MHz to 3 GHz operation • 0.25 dB insertion loss at 1 GHz • > 27 dB isolation at 3 GHz • 30 dBm P1dB at 3 V • 50 dBm IP3 at 3 V For sales or technical support, contact your authorized local sales representative (see www.rfmd.com/globalsales |
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RF Micro Devices |
3V 900MHZ LINEAR AMPLIFIER MODULE • Input/Output Internally Matched @ 50 Ω • Single 3V Supply • 29dBm Linear Output Power • 28dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT • 35% Linear Efficiency VREG 3 4 VMODE 5 VCC2 Ordering Information RF3105 RF3105 PCBA 3V 900MHz Li |
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RF Micro Devices |
GaN WIDE-BAND POWER AMPLIFIER Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Ω Operation Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure General Purpose Broadband Amplifiers Public Mob |
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RF Micro Devices |
60W GaN Wideband Power Amplifier ■ ■ ■ ■ ■ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical Performance Output Power: 75W at P3dB Drain Efficiency = 68% at P3dB -40°C to 85°C Oper |
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RF Micro Devices |
QUAD-BAND/GSM850/EGSM900/DCS/PCS/POWER AMPLIFIER MODULE Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53% Auto VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Integrated Power Flattening Circuit Reduces Power and Current into Mismatch Integrated VRAMP Rejection Filt |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • Complete Power Control Solution • Single 3.0V to 5.5V Supply Voltage • +35dBm GSM Output Power at 3.5V • +33dBm DCS/PCS Output Power at 3.5V SiGe Bi-CMOS 12 DCS/PCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VREG 5 VRAMP 6 GSM850/GSM900 IN 7 8 VCC2 9 |
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RF Micro Devices |
300W GaN Wide-Band Pulsed Power Amplifier • Wideband Operation 2.8GHz to 3.4GHz • Advanced GaN HEMT Technology • Advanced Heat-Sink Technology • Optimized Evaluation Board Layout for 50ohm Operation • Integrated matching components for high terminal impedances • 50V Operation Typical Perform |
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RF Micro Devices |
3V 1900MHZ LINEAR AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • Single 3V Supply • 28dBm Linear Output Power • -141dBm/Hz Noise Power VCC1 1 7 GND RF IN 2 6 RF OUT • 35% Linear Efficiency • 45mA Idle Current (Low Power Mode) VREG 3 4 VMODE 5 VCC2 Ordering In |
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RF Micro Devices |
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE • Complete Power Control Solution • Single 2.9V to 5.5V Supply Voltage 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VREG 5 VRAMP 6 GSM IN 7 8 VCC2 9 GSM OUT 10 VCC OUT 11 DCS OUT • +35dBm GSM Output Power at 3.5V • +33dBm DCS/PCS Output Power at 3 |
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RF Micro Devices |
3V 1800MHZ LINEAR AMPLIFIER MODULE |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • Integrated VREG • Complete Power Control Solution • +35dBm GSM Output Power at 3.5V DCS/PCS IN 37 BAND SELECT 40 TX ENABLE 41 VBATT 42 VBATT 43 VRAMP 45 GSM IN 48 Fully Integrated Power Control Circuit 31 DCS/PCS OUT • +33dBm DCS/PCS Output Powe |
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Micro Devices |
Spread Spectrum Baseband Modem • On-Chip ADCs and DACs, RSSI, AGC • BPSK/QPSK/CCK SiGe Bi-CMOS RX VGC RXVGC DAC CCA RX VGC ANT SEL • 250nS Delay Spread Equalizer CCA LNA GS • Supports Antenna Diversity • Reference Design Available I IN I IN ADC Demodulator 802.11 Preamble |
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RF Micro Devices |
POWER AMPLIFIER MODULE • Ultra-Small 6mmx6mm Package Size • Integrated VREG • Complete Power Control Solution • Automatic VBATT Tracking Circuit • No External Components or Routing • Improved Power Flatness Ordering Information DCS/PCS 1 RFIN BAND SELECT 2 TX ENABLE 3 VBA |
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RF Micro Devices |
GENERAL PURPOSE AMPLIFIER • DC to >6000MHz Operation • Internally Matched Input and Output • 20dB Small Signal Gain GND GND GND • +32dBm Output IP3 • +18dBm Output Power 9 NC 8 RF OUT 7 NC 12 NC 1 RF IN 2 NC 3 4 GND 11 10 • Footprint Compatible with Micro-X 5 GND 6 |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Ultra-Small, Ultra-Thin 6mmx6mmx1mm Package Size Integrated VREG Complete Power Control Solution Large Signal Polar Modulation EDGE Compatible No External Components or Routing Improved Power Flatness through Integrated Current Limiter. 2.5A |
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RF Micro Devices |
3V 1700MHZ LINEAR AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • Single 3V Supply • 28dBm Linear Output Power • -141dBm/Hz Noise Power VCC1 1 7 GND RF IN 2 6 RF OUT • 35% Linear Efficiency • 45mA Idle Current (Low Power Mode) VREG 3 4 VMODE 5 VCC2 Ordering In |
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RF Micro Devices |
3V 900MHZ LINEAR AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • Single 3V Supply • 30dBm Linear Output Power • 30dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT • 33% Linear Efficiency • 55mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3117 RF3117 |
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RF Micro Devices |
3V 1900MHZ LINEAR AMPLIFIER MODULE • Input/Output Internally Matched@50 Ω • Single 3V Supply • 29dBm Linear Output Power • 27dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT • 34% Linear Efficiency • 50mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3118 RF3118 |
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RF Micro Devices |
CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER • Single 5V Supply • Differential Input and Output • -30dB to +28dB Voltage Gain Range • 5MHz to 65MHz Operation • Sophisticated Power Management • DOCSIS 1.1 RF Compliant 16 Power Control GND NC NC VOUT VOUTB SDA CS SCLK 15 14 13 12 11 Gain Cont |
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Desde 2024. D4U Semiconductor.
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