No. | parte # | Fabricante | Descripción | Hoja de Datos |
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RF Micro Devices |
GaAs/GaN Power Doubler Hybrid ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 24.5dB Min. Gain at 1218MHz ■ 480mA Max. ■ Extra Pin For Current Adjustment Functional Block Diagram Applic |
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RF Micro Devices |
CASCADABLE SiGe HBT MMIC AMPLIFIER DC to 3500MHz Operation Cascadable 50Ω Single Voltage Supply High Gain: 16.3 dB Typical at 1950 MHz Low Thermal Resistance Package Functional Block Diagram Applications Power Amplifier Driver Amplifier Cellular, PCS, GSM, UMTS IF/R |
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RF Micro Devices |
CASCADABLE SiGe HBT MMIC AMPLIFIER High Gain: 14.8 dB at 1950MHz DC to 4000MHz Operation Cascadable 50Ω Operates From Single Voltage Supply Low Thermal Resistance Package Functional Block Diagram Applications Power Amplifier Driver Amplifier Cellular, PCS, GSM, UMTS |
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RF Micro Devices |
CASCADABLE SiGe HBT MMIC AMPLIFIER DC to 3000MHz Operation High Output IP3: +37.7 dBm Typical at 850 MHz Low Noise Figure: 3.2dB Typical at 1950 MHz Functional Block Diagram Applications Oscillator Amplifiers Power Amplifier for Low or Medium Power Applications IF/RF Bu |
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RF Micro Devices |
GaAs/GaN Power Doubler Hybrid ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 22.5dB Min. Gain at 1218MHz ■ 480mA Max. ■ Extra Pin For Current Adjustment Functional Block Diagram Applic |
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RF Micro Devices |
DC to 3500MHz CASCADABLE SiGe HBT MMIC AMPLIFIER DC to 3500MHz Operation Cascadable 50Ω Single Voltage Supply Low Thermal Resistance Package Functional Block Diagram Applications Power Amplifier Driver Amplifier Cellular, PCS, GSM, UMTS IF/RF Buffer Amplifier Wireless Data, Satell |
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