RECTRON BC8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BC847B	RECTRON	NPN Silicon Planar Epitaxial Transistors
2	BC817-25	RECTRON	NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed *
3	BC846A	RECTRON	NPN Silicon Planar Epitaxial Transistors
4	BC846	RECTRON	NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10
5	BC848C	RECTRON	NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E
6	BC847A	RECTRON	NPN Silicon Planar Epitaxial Transistors
7	BC847C	RECTRON	NPN Silicon Planar Epitaxial Transistors
8	BC848	RECTRON	NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10
9	BC848B	RECTRON	NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E
10	BC817-16	RECTRON	NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed *
11	BC857	RECTRON	PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA,
12	BC848A	RECTRON	NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E
13	BC858	RECTRON	PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA,
14	BC807-40W	Rectron	Silicon PNP Transistor itter Current ICES 9CE=-25V IB=0 Emitter Cutoff Current IEBO 9EB=-4V IC=0 DC Current Gain HFE (1) 9CE=-1V IC=-100mA HFE (2) 9CE=-1V IC=-500mA Collector-Emitter Saturation Voltage VCE(sat) ,C=-500mA IB=-50mA Collector-Base Satura
15	BC858B	Rectron	SOT-23 BIPOLAR TRANSISTORS * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas
16	BC847	RECTRON	NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10
17	BC817-40	RECTRON	NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed *
18	BC856	RECTRON	PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA,
19	BC856B	RECTRON	PNP Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas
20	BC857A	RECTRON	PNP Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -50 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas