logo

RCA 2N4 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
2N4101

RCA
Thyristors
Datasheet
2
2N4102

RCA
Thyristors
Anode _&~S81 ~.~ Ca;:~e~Gate (Pin 21 (Pin 11 2N3228 2N3525 2N4101 H-134D JEDEC T0-66 ~R Gate Anode (Pin 21 (Pin 3, Casel """ Cathodo 2N3528 (Pin 1) 2N3529 2N4102 H1015 JEDEC TO-B Current._ _ Voltage t For 120-Volt Line Operation A
Datasheet
3
2N4314

RCA
Power Transistors

• 2N4036} are p-n-p complements of {2N2102A& 2N4037 2N3053
• Gain-bandwidth product tfT) =60 MHz min
• High breakdown voltages
• Maximum-area-of-operation curves
• Planar construction provides low noise and low leakage
• Low saturation voltages
Datasheet
4
2N4103

RCA
Thyristors
o Low switching losses o High di/dt and dv/dt capabilities o Sh
Datasheet
5
2N4063

RCA
Power Transistors

• High voitage ratings: Vceo = 450 V max. (2N3439, 2N4063) These devices are available with either 1%- = 300 V max. (2N3440; 2N4064) inch leads (TO-5 package) or %-inch leads VCEO{sus) = 350 V max. (2N3439, 2N4063) = 250 V max. (2N3440, 2N4064)
Datasheet
6
2N4064

RCA
Power Transistors

• High voitage ratings: Vceo = 450 V max. (2N3439, 2N4063) These devices are available with either 1%- = 300 V max. (2N3440; 2N4064) inch leads (TO-5 package) or %-inch leads VCEO{sus) = 350 V max. (2N3439, 2N4063) = 250 V max. (2N3440, 2N4064)
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad