| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Qunli Electric |
NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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Shaanxi Qunli Electric |
NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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Qunli Electric |
NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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Qunli Electric |
NPN Silicon High FrequencyLow Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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|
|
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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|
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
|
|
|
|
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
|
|
|
|
Qunli Electric |
NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment |
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Desde 2024. D4U Semiconductor.
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