Qunli Electric 3DD Hoja de datos

No.	parte #	Fabricante	Descripción
1	3DD167	Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use fo
2	3DD169	Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use fo
3	3DD11	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use fo
4	3DD57	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplif
5	3DD164	Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use fo
6	3DD166	Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use fo
7	3DD102	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f
8	3DD101	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f
9	3DD100	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f
10	3DD60	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplif
11	3DD10	Shaanxi Qunli Electric	NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use fo