Qorvo QPD Hoja de datos

No.	parte #	Fabricante	Descripción
1	QPD1003	Qorvo	GaN RF IMFET • Frequency: 1.2 to 1.4 GHz • Output Power (P3dB)1: 540 W • Linear Gain1: 19.9 dB • Typical PAE3dB1: 66.7% • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable Note 1: @ 1.3 GHz Applications • Military radar • Civilian radar In
2	QPD1013	Qorvo	GaN RF Transistor  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 %1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull) Applicati
3	QPD1018	qorvo	GaN RF IMFET • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB1: 67.9% • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable Note 1: @ 2.9 GHz Applications • Military radar • Civilian radar
4	QPD1006	Qorvo	RF IMFET • Frequency: 1.2 to 1.4 GHz • Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed) • Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed) • Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed) • Operating Voltage: 45 V (CW), 50 V (Pulsed) • Low thermal resistance package
5	QPD1011	Qorvo	7W GaN RF Input-Matched Transistor • Frequency: 30 to 1200 MHz • Output Power (P3dB)1: 8.7 W • Linear Gain1: 21 dB • Typical PAE3dB1: 60 % • Operating Voltage: 50 V • CW and Pulse capable Note 1: @ 1 GHz Load Pull Applications • Military radar • Civilian radar • Land mobile and milita
6	QPD1026L	Qorvo	GaN RF Input-Matched Transistor • Frequency: 420 to 450 MHz • Output Power (P3dB)1: 1318 W • Linear Gain1: 25.9 dB • Typical PAE3dB1: 80.8 % • Operating Voltage: 65 V • CW and Pulse capable Note 1: @ 440 MHz Load Pull Applications • UHF Radar • Amateur Radio • Public Safety Radio