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Powersem |
Thyristor/Diode Modules TVJ = 125 °C t = 10 ms (50 Hz), sine ∫ i dt 2 • • • • • Isolation voltage 3600 V∼ Planar glass passivated chips Low forward voltage drop TVJ = 125 °C t = 10 ms (50 Hz), sine Leads suitable for PC board soldering UL registered, E 148688 (di/dt) |
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Powersem |
Diode Module International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ● TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM RthJC 50/60 Hz |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 |
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Powersem |
Thyristor/Diode Modules International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins Applications Motor control, softstarter Power converter He |
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Powersem |
Thyristor/Diode Modules ● 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A/µs V/µs (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight ● W W W V °C °C °C V~ V~ ● ● ● ● International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Pl |
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Powersem |
Thyristor/Diode Modules TVJ = 125 °C t = 10 ms (50 Hz), sine ∫ i dt 2 • • • • • Isolation voltage 3600 V∼ Planar glass passivated chips Low forward voltage drop TVJ = 125 °C t = 10 ms (50 Hz), sine Leads suitable for PC board soldering UL registered, E 148688 (di/dt) |
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Powersem |
Fast Recovery Epitaxial Diode (FRED) Module International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ● ∫i2dt TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM 50/60 Hz, RMS IISOL ≤ 1 |
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Powersem |
Diode Module Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ∫i2dt Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC pow |
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Powersem |
Diode Module Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ∫i2dt Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC pow |
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Powersem |
Diode Module Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment DC supply for PWM inverter Fiel |
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Powersem |
Thyristor/Diode Modules International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins ● ● ● ● ● ● Applications Motor control Power converter Heat and temp |
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Powersem |
Thyristor/Diode Modules International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins ● ● ● ● ● ● Applications Motor control Power converter Heat and temp |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.5 A, non repetitive, IT = ITAVM diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 5 |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.5 A, non repetitive, IT = ITAVM diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 5 |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = 250 A diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs |
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Powersem |
Thyristor/Diode Modules ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = 250 A diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs |
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Powersem |
Thyristor/Diode Modules ● ● PSKT 3 1 5 42 PSKH ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 1A non repetitive, IT = ITAVM diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (l |
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Powersem |
Thyristor/Diode Modules ● ● PSKT 3 1 5 42 PSKH ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 1A non repetitive, IT = ITAVM diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (l |
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Powersem |
Thyristor/Diode Modules International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ |
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Desde 2024. D4U Semiconductor.
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