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Powerex |
Dual IGBT HVIGBT Module -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-u |
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Powerex |
Dual IGBT HVIGBT Module -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-u |
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Powerex |
Dual IGBT HVIGBT Module -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-u |
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Powerex |
Dual IGBT HVIGBT Module Advanced Mitsubishi R-Series Chip Technology Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Medium Voltage Drives High Vo |
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Powerex |
Split Dual Si/SiC Hybrid IGBT Module £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ Copper Baseplate Appl |
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Powerex |
IGBT Module £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell 04/10 Rev. 0 1 |
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Powerex Power Semiconductors |
Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) ♦ Low Drive Power ♦ Low VCE(sat) ♦ Discrete Fast Recovery Free-Wheel Diode ♦ High Frequency Operation (2025kHz) ♦ Isolated Base plate for Easy Heat sinking ♦ Fully Hermetic Package ♦ Package Design Capable of Use at High Altitudes Schematic: Applic |
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Powerex |
Dual IGBT HVIGBT Module -55 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology AlSiC Baseplate Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance C |
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Powerex |
Dual IGBT HVIGBT Module -55 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology AlSiC Baseplate Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance C |
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Powerex |
HVIGBT Module Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Traction Medium Voltage Drives High Voltage Power Supplies 09/12 Rev. 9 1 |
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Powerex |
Dual IGBT HVIGBT Module -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-u |
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Powerex |
HVIGBT Module Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Traction Medium Voltage Drives High Voltage Power Supplies 09/12 Rev. 8 1 |
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Powerex |
Split Dual Si/SiC Hybrid IGBT Module £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ AlSiC Baseplate £ Ro |
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Powerex |
IGBT Module £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell 04/10 Rev. 0 1 |
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Powerex |
Dual IGBT Module Class H Hybrid Screened to MIL-PRF-38534 Requirements Withstand HAST Light Weight AlSiC Baseplate Low Drive Requirement Ultra-fast Free Wheeling Diode Internal Zener Protection on Gates High Side Collector Sense Pin for De-sat De |
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