PowerSemiconductors 2-2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2-2W5I-AT603	PowerSemiconductors	WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu
2	2-2W5I-AT636S18	PowerSemiconductors	WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger
3	2-2W5I-AT804	PowerSemiconductors	WATERCOOLEDA.C.SWITCH CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigge
4	2-2W5I-AT505	PowerSemiconductors	WATERCOOLEDA.C.SWITCH UCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cur
5	2-2W5I-AT505S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH UCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cur
6	2-2W5I-AT603S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu
7	2-2W5I-AT636	PowerSemiconductors	WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger
8	2-2W5I-AT804S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigge
9	2-2WI-1000S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu
10	2-2W5-PI	PowerSemiconductors	WATERCOOLEDA.C.SWITCH r T(RMS) TSM I² t TM T(TO) T ITM = 1800 A SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu
11	2-2W5I-AT1004	PowerSemiconductors	WATERCOOLEDA.C.SWITCH Ω CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trig
12	2-2W5I-AT1004S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH Ω CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trig
13	2-2WI-1000	PowerSemiconductors	WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu
14	2-2WI-1200	PowerSemiconductors	WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger
15	2-2WI-1200S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger
16	2-2WI-600	PowerSemiconductors	WATERCOOLEDA.C.SWITCH TING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger curre
17	2-2WI-600S16	PowerSemiconductors	WATERCOOLEDA.C.SWITCH TING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger curre