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SEMTECH |
PNP Silicon Epitaxial Planar Medium Power Transistor |
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SEMTECH |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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SEMTECH |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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Power Silicon |
SURFACE MOUNT SWITCHING DIODES z ISOLATED,SERIES-CONNECTED DIODE PAIR z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION .121(3.10) .109(2.80) .0 4 5 (1. 1 5) .0 3 5 (0. 9 0) .0 2 3 (0. 6 0) .1 0 0 (2. 5 5) .0 8 8 (2. 2 5) .0 5 5( 1.4) .0 4 6( 1.2) .0 2 0 (0. 5 0 ) |
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JR Electronics |
PNP Silicon Epitaxial Planar Medium Power Transistor |
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CHINA BASE |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR • High Gain –Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State –of –the –Art Technology Fine Line Geometry Ion –Implanted Arsenic Emitters Gold Top Metallizat |
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SeCoS |
NPN Silicon Medium Power Transistor Epitaxial planar die construction PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 123 A EC 4 B F G H J D K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Collector-Base Voltage |
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CHINA BASE |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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ETC |
The Small-Signal PNP Silicon Chopper Low-Power Transistor Ø Ø High collector current IC= -300 mA Low saturation voltages VCE(sat)= -0.4 V VBE(sat)= -1.5 V High total power dissipation PT= 200 mW Excelent hFE linearity 1 – Collector 2 – Emitter 3 – Base SOT23 JEDEC EIAJ GOST Weight: TO-236 SC-59 ÊÒ-46 0.01 |
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Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR • High Gain –Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State –of –the –Art Technology Fine Line Geometry Ion –Implanted Arsenic Emitters Gold Top Metallizat |
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Desde 2024. D4U Semiconductor.
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