| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8045 thru MBR80100R VRRM = 45 V - 100 V IF(AV) = 80 A DO-5 Package |
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America Semiconductor |
Silicon Power Schottky Diode |
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America Semiconductor |
Silicon Power Schottky Diode |
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Power Silicon |
DUAL SCHOTTKY BARRIER RECTIFIER z EXTREMELY LOW VF z LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION z LOW POWER LOSS / HIGH EFFICIENCY z UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND MECHANICAL DATA z CASE：TRANSFER MOLDED z LEADS：SOLDERABLE PER MIL-STD-202,METHOD 208 z POLARITY：AS |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8020 thru MBR8040R VRRM = 20 V - 40 V IF(AV) = 80 A DO-5 Package Max |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage |
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America Semiconductor |
Silicon Power Schottky Diode |
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America Semiconductor |
Silicon Power Schottky Diode |
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PowerSilicon |
DUAL SCHOTTKY BARRIER RECTIFIER z EXTREMELY LOW VF z LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION z LOW POWER LOSS / HIGH EFFICIENCY z UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND . 405 (10. 27 ) . 383 ( 9. 72 ) .18 8 (4. 80 ) ) 6 5 . 3 ( 0 4 1 . ) 0 3 . 3 ( 0 3 1 . .1 72 (4. |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reverse |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum |
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Desde 2024. D4U Semiconductor.
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