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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH Ω CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trig |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH Ω CONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trig |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1650 1345 26.9 3618 x1E3 1.45 0.82 0.200 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltag |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1650 1345 26.9 3618 x1E3 1.45 0.82 0.200 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltag |
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Power Semiconductors |
PHASE CONTROL THYRISTOR ithout reverse voltage On-state current = 2900 A 25 125 125 125 1545 1255 24.6 3026 x1E3 1.63 0.92 0.216 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical ra |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1450 1190 22.4 2509 x1E3 1.75 0.92 0.260 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltag |
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Power Semiconductors |
PHASE CONTROL THYRISTOR ithout reverse voltage On-state current = 2900 A 25 125 125 125 1545 1255 24.6 3026 x1E3 1.63 0.92 0.216 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical ra |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1450 1190 22.4 2509 x1E3 1.75 0.92 0.260 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltag |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 2900 A 25 125 125 125 1270 1035 19 1805 x1E3 2 1.15 0.308 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 2900 A 25 125 125 125 1270 1035 19 1805 x1E3 2 1.15 0.308 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1275 1100 20 2000 x1E3 2.5 1.2 0.450 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, m |
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Power Semiconductors |
PHASE CONTROL THYRISTOR e current = 2900 A 25 125 125 125 1275 1100 20 2000 x1E3 2.5 1.2 0.450 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, m |
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Desde 2024. D4U Semiconductor.
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