| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Power Innovations Limited |
PNP Transistor rate linearly to 150°C free air temperature at the rate of 16 mW/°C. BD898A BD900A V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -45 -60 -80 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUC |
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Power Innovations Limited |
PNP Transistor the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W ° |
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Power Innovations Limited |
PNP Transistor the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W ° |
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Desde 2024. D4U Semiconductor.
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