| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G |
|
Desde 2024. D4U Semiconductor.
|